Direct Observation of Gap Sates in a-IGZO Thin Film by hν-Dependent High-Sensitivity Ultraviolet Photoemission Spectroscopy

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Mar 20, 2018 9:00 AM - 11:45 AM G203 (63-203)

Tsuyoshi Honma(Nagaoka Univ. of Tech.), Tamihiro Gotoh(Gunma Univ.)

10:00 AM - 10:15 AM

〇(M1)Atsushi Matsuzaki¹, Tomoya Sato¹, Hiroshi Tokairin², Hisao Ishii^1,3,4 (1.Chiba Univ., 2.Idemitsu Kosan, 3.CFS Chiba Univ., 4.MCRC Chiba Univ.)

Keywords:Oxide semiconductor, Photoemission spectroscopy, a-IGZO