Oral presentation

[20a-G203-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Mar 20, 2018 9:00 AM - 11:45 AM G203 (63-203)

Tsuyoshi Honma(Nagaoka Univ. of Tech.), Tamihiro Gotoh(Gunma Univ.)

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9:00 AM - 9:15 AM

[20a-G203-1] Silver photodiffusion into Ge chalcogenide - chalcogenide thickness dependence on the reaction rate

〇Yoshifumi Sakaguchi¹, Hidehito Asaoka², Maria Mitkova³ (1.CROSS, 2.ASRC JAEA, 3.BSU (U.S.A.))

9:15 AM - 9:30 AM

[20a-G203-2] The operation properties of Cr₂Ge₂Te₆-based phase change memory

〇Shogo Hatayama¹, Yuji Sutou¹, Daisuke Ando¹, Junichi Koike¹ (1.Tohoku Univ.)

9:30 AM - 9:45 AM

▲ [20a-G203-3] Temperature Dependence of Transverse Resistance and Bipolar Switching in Ge-Sb-Te Films upon Annealing

〇Leonid Bolotov¹, Yuta Saito¹, Junji Tominaga¹, Tetsuya Tada¹ (1.AIST)

9:45 AM - 10:00 AM

△ [20a-G203-4] Frequency multiplier based on a Ge-Sb-Te thin film

〇Ryoka Kondo¹, Naoki Shikakura¹, Tatsuya Kanehira¹, Shigeo Kawasaki², Hitoshi Hayashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.JAXA)

10:00 AM - 10:15 AM

△ [20a-G203-5] Direct Observation of Gap Sates in a-IGZO Thin Film by hν-Dependent High-Sensitivity Ultraviolet Photoemission Spectroscopy

〇(M1)Atsushi Matsuzaki¹, Tomoya Sato¹, Hiroshi Tokairin², Hisao Ishii^1,3,4 (1.Chiba Univ., 2.Idemitsu Kosan, 3.CFS Chiba Univ., 4.MCRC Chiba Univ.)

10:15 AM - 10:30 AM

△ [20a-G203-6] Thickness dependence of the stimulated emission for ZnO thin films

〇Ryosuke Matsuzaki¹, Yutaka Adachi², Takashi Uchino¹ (1.Kobe Univ., 2.NIMS)

10:30 AM - 10:45 AM

[20a-G203-7] Generation of Zero-Phonon Lines in The Near Ultra-Violet Region and Their Emission Properties form Hexagonal Boron Nitride

〇Emi Tsushima¹, Takashi Uchino¹ (1.Kobe Univ.)

10:45 AM - 11:00 AM

[20a-G203-8] Research on Ultrafast Wavelength Converter Using Tellurite Glass Systems
-Sample thickness dependence of second-order nonlinear optical constant-

〇Sayaka Inoue¹, Asuka Kusano¹, Seiko Mitati¹ (1.Tokyo Univ. Tec)

11:00 AM - 11:15 AM

[20a-G203-9] Down Conversion luminescence Mechanism of Tb³⁺,Yb³⁺ codoped ZrO₂-SiO₂ Nano-crystallized Glasses

〇Tomokatsu Hayakawa¹, Masato Isogai¹, Jean Rene Duclere², Philippe Thomas² (1.Nagoya Inst. Tech., 2.Limoges Univ.)

11:15 AM - 11:30 AM

[20a-G203-10] Compositional Dependence of Ce Emission in Alkaline Earth Borate Glasses

〇Hirokazu Masai¹, Go Okada², Noriaki Kawaguchi², Takayuki Yanagida² (1.AIST, 2.NAIST)

11:30 AM - 11:45 AM

[20a-G203-11] The dose response and mechanism of radiophotoluminescence phenomenon induced in Cu-doped glasses

〇(M1)Ryo Hashikawa¹, Yasuhiro Fujii¹, Atsushi Kinomura², Takeshi Saito², Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. Tech., 2.KURRI)

Oral presentation

[20p-G203-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Mar 20, 2018 1:15 PM - 3:30 PM G203 (63-203)

Hirokazu Masai(AIST)

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▲：英語発表
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1:15 PM - 1:45 PM

[20p-G203-1] [INVITED] Unique Crystallization of Transition Metal Containing Alkali Phosphate Glass

〇Tsuyoshi Honma¹ (1.Nagaoka Univ. Tech.)

1:45 PM - 2:00 PM

[20p-G203-2] Growth of copper sulfide dendrites

〇Tamihiro Gotoh¹, Hiroki Hirose¹, Ryotaro Nishikawa¹ (1.Gunma Univ.)

2:00 PM - 2:15 PM

[20p-G203-3] Morphological analysis of nickel hydroxide by first-principles calculation

〇satoshi yoshio¹, Koichiro Maki¹ (1.SumitomoMetalMining)

2:15 PM - 2:30 PM

[20p-G203-4] Evaluation of glass contained in thick film resistors

〇Takahiro Ueda¹ (1.Sumitomo Metal Minig)

2:30 PM - 2:45 PM

[20p-G203-5] Effect of B₂O₃ substitution on high temperature viscoelasticity of Na₂O-3SiO₂ glass

〇Naoyuki Kitamura¹ (1.AIST)

2:45 PM - 3:00 PM

[20p-G203-6] Diffusion of Hydroxyl Groups through the Binding Interface of Silica glasses Containing Hydroxyl Groups and ODCs.

〇(M2)Yu Arakawa¹, Yusuke Aoki¹, Nobu Kuzuu¹, Hideharu Horikoshi², Naohiro Horii³ (1.Univ. of Fukui, 2.Tosoh SGM., 3.Nat'l Inst. Tech. Fukui Coll.)

3:00 PM - 3:15 PM

[20p-G203-7] Luminescence and Raman detection of interstitial Cl₂ and ClClO molecules in silica glasses

Linards Skuja¹, 〇Koichi Kajihara², Smits Krisjanis¹, Andrejs Silins¹, Hideo Hosono³ (1.Univ. Latvia, 2.TMU, 3.TITech)

3:15 PM - 3:30 PM

[20p-G203-8] Optical properties in Bi³⁺ containing silicate glasses

〇Akira Saitoh¹, Masayuki Itadani¹, Keita Suzuki¹, Hiromichi Takebe¹ (1.Ehime Univ.)

Poster presentation

[19a-P5-1~6] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Mon. Mar 19, 2018 9:30 AM - 11:30 AM P5 (P)

△：奨励賞エントリー
▲：英語発表
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9:30 AM - 11:30 AM

[19a-P5-1] Diffusion of OH Groups through the Binding Interface of Silica Glasses with containing Cl and OH groups

〇(B)Yusuke Aoki¹, Yu Arakawa¹, Nobu Kuzuu¹, Hideharu Horikoshi², Naohiro Horii³ (1.Univ. of Fukui, 2.Tosoh SGM, 3.Nat'l Inst. Tech. Fukui Coll.)

9:30 AM - 11:30 AM

[19a-P5-2] Preparation of low-phonon energy CaO-Al₂O₃-Ga₂O₃ glasses

〇Kaito Noda¹, Takenobu Suzuki¹, Yasutake Ohishi¹ (1.Toyota technol. Inst.)

9:30 AM - 11:30 AM

[19a-P5-3] X-ray Absorption Fine Structure Analysis of Tin in Oxide Glass

〇Hirokazu Masai¹, Toshiaki Ina², Ko Mibu³ (1.AIST, 2.JASRI/SPring-8, 3.Nagoya Inst. Technol.)

9:30 AM - 11:30 AM

[19a-P5-4] Selective Growth of Si on Ge/Si-QDs and Their Photoluminescence Properties

〇Shuntaro Fujimori¹, Kentaro Yamada¹, Ryo Nagai¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

[19a-P5-5] Influence of staring point thickness on the crystallization of a-Si films by flash lamp annealing

〇Daiki Sato¹, Keisuke Ohdaira¹ (1.JAIST)

9:30 AM - 11:30 AM

[19a-P5-6] Effect of substrate temperature during the electron-beam evaporation of amorphous Si films on their crystallization by FLA on textured glass substrates

〇(M1C)Keisuke Kurata¹, Keisuke Ohdaira¹ (1.JAIST)

Sessions

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-G203-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-G203-1] Silver photodiffusion into Ge chalcogenide - chalcogenide thickness dependence on the reaction rate

[20a-G203-2] The operation properties of Cr₂Ge₂Te₆-based phase change memory

▲ [20a-G203-3] Temperature Dependence of Transverse Resistance and Bipolar Switching in Ge-Sb-Te Films upon Annealing

△ [20a-G203-4] Frequency multiplier based on a Ge-Sb-Te thin film

△ [20a-G203-5] Direct Observation of Gap Sates in a-IGZO Thin Film by hν-Dependent High-Sensitivity Ultraviolet Photoemission Spectroscopy

△ [20a-G203-6] Thickness dependence of the stimulated emission for ZnO thin films

[20a-G203-7] Generation of Zero-Phonon Lines in The Near Ultra-Violet Region and Their Emission Properties form Hexagonal Boron Nitride

[20a-G203-8] Research on Ultrafast Wavelength Converter Using Tellurite Glass Systems
-Sample thickness dependence of second-order nonlinear optical constant-

[20a-G203-9] Down Conversion luminescence Mechanism of Tb³⁺,Yb³⁺ codoped ZrO₂-SiO₂ Nano-crystallized Glasses

[20a-G203-10] Compositional Dependence of Ce Emission in Alkaline Earth Borate Glasses

[20a-G203-11] The dose response and mechanism of radiophotoluminescence phenomenon induced in Cu-doped glasses

[20p-G203-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20p-G203-1] [INVITED] Unique Crystallization of Transition Metal Containing Alkali Phosphate Glass

[20p-G203-2] Growth of copper sulfide dendrites

[20p-G203-3] Morphological analysis of nickel hydroxide by first-principles calculation

[20p-G203-4] Evaluation of glass contained in thick film resistors

[20p-G203-5] Effect of B₂O₃ substitution on high temperature viscoelasticity of Na₂O-3SiO₂ glass

[20p-G203-6] Diffusion of Hydroxyl Groups through the Binding Interface of Silica glasses Containing Hydroxyl Groups and ODCs.

[20p-G203-7] Luminescence and Raman detection of interstitial Cl₂ and ClClO molecules in silica glasses

[20p-G203-8] Optical properties in Bi³⁺ containing silicate glasses

[19a-P5-1~6] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[19a-P5-1] Diffusion of OH Groups through the Binding Interface of Silica Glasses with containing Cl and OH groups

[19a-P5-2] Preparation of low-phonon energy CaO-Al₂O₃-Ga₂O₃ glasses

[19a-P5-3] X-ray Absorption Fine Structure Analysis of Tin in Oxide Glass

[19a-P5-4] Selective Growth of Si on Ge/Si-QDs and Their Photoluminescence Properties

[19a-P5-5] Influence of staring point thickness on the crystallization of a-Si films by flash lamp annealing

[19a-P5-6] Effect of substrate temperature during the electron-beam evaporation of amorphous Si films on their crystallization by FLA on textured glass substrates

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