[20p-C101-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20p-C101-1] Performance evaluation of minimal optical interference type film thickness tester

〇Norio Umeyama^1,2, Noriko Miura², Kazushige Sato², Miyako Hada³, Hiroshi Nishizato³, Takumi Moriyama⁴, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.HORIBA STEC, 4.HORIBA)

Keywords:Minimal Fab, optical interference, film thickness tester

For minimal fab, emphasis is placed on the immediate effectiveness of evaluation and testing, and an in-line film thickness tester is necessary. Three types of resistance heating, focusing heating, and laser heating are used for forming an oxide film an using minimal apparatus, and since a small half-inch wafer is used, securing an effective area in the wafer surface is important; a small diameter of spot is required. In order to make the apparatus compact, an optical interference method was used instead of the spectroscopic Ellipsometry method. This apparatus development and performance evaluation will be reported.