Fabrication of normally-off n-JFETs and p-JFETs on a semi-insulating SiC substrate by ion implantation

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

3:45 PM - 4:00 PM

〇Masashi Nakajima¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, High-temperature operation IC, JFET