Al ion implantation into n<sup>+</sup>-channel SiC junctionless MOSFET for evaluating the impact of Al atoms on channel mobility

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

2:30 PM - 2:45 PM

〇Hironori Takeda¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:SiC MOSFET, Al ion implantation, Electron mobility