Akihiro Hayasaka

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

[18p-N302-11] Reduction of plasma damage in N-polar GaN HEMT fabrication process

〇Akihiro Hayasaka¹, Ryosuke Aonuma¹, Koushi Hotta¹, Nanae Kanai¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd.)

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