Kozo Nakamura

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

10:00 AM - 10:15 AM

[18a-C212-5] Point defect reaction in the heavily doped n type CZ-Si during crystal growth process

〇Kozo Nakamura¹, Shingo Narimatsu², Takeshi Senda², Susumu Maeda² (1.Okayama Pref.Unv., 2.GrobalWefers Japan)