[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-5] Point defect reaction in the heavily doped n type CZ-Si during crystal growth process

〇Kozo Nakamura¹, Shingo Narimatsu², Takeshi Senda², Susumu Maeda² (1.Okayama Pref.Unv., 2.GrobalWefers Japan)

Keywords:Impurity effect, Point defects

When CZ-Si crystal is heavily doped with n-type elements such as As and P, vacancy-type defects (voids) increase, but when it reaches a certain concentration (2 to 3 x 10 ¹⁹ cm^-3), they disappear and no interstitial silicon type dislocation loops are observed. In this report, we investigated this phenomenon using the point defect reaction model proposed by Voronkov