Shigekazu Okumura

→ Search for Shigekazu Okumura in Google Scholar

Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:15 PM - 6:00 PM B31 (B31)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

4:00 PM - 4:15 PM

[18p-B31-10] Suppression of pit formation in InAs growth on GaSb(001) by two-step MBE

〇Shigekazu Okumura^1,2, Ryo Suzuki¹, Koji Tsunoda¹, Hironori Nishino¹, Masakazu Sugiyama² (1.Fujitsu Lab., 2.RCAST Univ. of Tokyo)