Masashi Kato

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

1:00 PM - 1:15 PM

[18p-N302-1] Si concentration dependence of slow decay components in TR-PL from n-GaN epilayers

〇Masashi Kato^1,2, Takato Asada¹, Shuai Zhu¹, Kenji Ito³, Kazuyoshi Tomita³, Tetsuo Narita³, Tetsu Kachi² (1.NITech, 2.Nagoya Univ., 3.Toyota Central R&D Labs.)

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