Jun Nishimura

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

5:45 PM - 6:00 PM

△ [18p-N302-18] Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET

〇(M1)Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN.)