Marina Yamaguchi

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[19a-E305-1~12] 13.3 Insulator technology

11:15 AM - 11:30 AM

[19a-E305-9] Improvement of Endurance for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)