1:30 PM - 3:30 PM [19p-PA3-2] Dependence of electrical characteristics on channel layer structure of ZnO-FET integrated with piezoelectric (P (VDF-TrFE)) film for gate insulator 〇Takuya Okayama1, Shusaku Matsumoto1, Akio Furukawa1 (1.Tokyo Univ. of Science)