Yuto Ando

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

△ [20a-E301-10] Effect of interface state density on channel mobility in GaN lateral MISFET 2.

〇Yuto Ando^1,6, Tohru Nakamura², Manato Deki², Noriyuki Taoka¹, Atsushi Tanaka^2,3, Hirotaka Watanabe², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hisashi Yamada⁶, Mitsuaki Shimizu^2,6, Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.AIST GaN-OIL)

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