Hikaru Yoshida

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

10:15 AM - 10:30 AM

[20a-E301-6] CV, DLTS of SiO₂/p-GaN MOS fabricated on high-temperature annealed p-GaN

〇(M1)Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Takashi Okawa², Hidemoto Tomita² (1.Aichi Inst. of Technol., 2.Toyota Motor Corporation)

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[19p-PB3-18] Distribution of the H_d (E_v+0.88 eV) trap concentration in a p-GaN wafer grown by MOVPE on GaN

〇(M1)Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

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