Yuta Matsuya

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

10:15 AM - 10:30 AM

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

〇Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)