Kexiong Zhang

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-E310-1~21] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM

▲ [20p-E310-13] High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN

〇Kexiong Zhang¹, T. Takahashi¹, N. Kumagai¹, G. W. Cong¹, D. Ohori², K. Endo¹, M. Shimizu^1,3, S. Samukawa², X. L. Wang^1,3 (1.AIST, 2.Tohoku Univ., 3.Nagoya Univ.)

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