16:30 〜 16:45
▲ [20p-E310-13] High efficiency neutral-beam-etched nanodisk of InGaN/GaN MQWs buried with regrown GaN
〇Kexiong Zhang1、T. Takahashi1、N. Kumagai1、G. W. Cong1、D. Ohori2、K. Endo1、M. Shimizu1,3、S. Samukawa2、X. L. Wang1,3 (1.AIST、2.Tohoku Univ.、3.Nagoya Univ.)