5:45 PM - 6:00 PM
[20p-E311-16] The effect of annealing temperature for ODMR signals of silicon vacancy in SiC crystal
〇(M2)Yoji Chiba1,2, Yuichi Yamazaki2, Takahiro Makino2, Shin-ichiro Sato2, Naoto Yamada2, Takahiro Satoh2, Yasuto Hijikata1, Takeshi Ohshima2 (1.Saitama Univ., 2.QST)