Wensheng Wang

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 9:00 AM - 12:30 PM C309 (C309)

Oral presentation
| 6 Thin Films and Surfaces
| 6.1 Ferroelectric thin films

[21a-C309-1~13] 6.1 Ferroelectric thin films

11:45 AM - 12:00 PM

[21a-C309-11] Development of a ferroelectric capacitor with double-layered PbLa(Zr,Ti)O₃ thin films aiming to lowering operation voltage and leakage current of FRAM

〇Wensheng Wang¹, Ko Nakamura¹, Kazuaki Takai¹, Kenji Nomura², Takashi Eshita^3,1, Masaaki Nakabayashi¹, Soichiro Ozawa¹, Hideshi Yamaguchi², Satoru Mihara¹, Yukinobu Hikosaka¹, Hitoshi Saito¹, Yuji Kataoka², Manabu Kojima¹ (1.Fujitsu Semiconductor Ltd., 2.Fujitsu Lab., 3.Wakayama Univ.)