Yoshimi Yamashita

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 9:00 AM - 12:30 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

[21a-E301-10] Ti/Al thickness dependence of ohmic contact resistances for AlGaN/AlN/GaN HEMT structures with thin AlGaN barrier layer

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akifumi Kasamatsu¹ (1.NICT)