Takeru Kumabe

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 9:00 AM - 12:30 PM E301 (E301)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

△ [21a-E301-5] Gallium-nitride-based heterojunction bipolar transistors with two-dimensional hole gas fabricated by epitaxial lift-off process

〇Takeru Kumabe¹, Masaya Ogura¹, Atsushi Tanaka^2,3, Yuto Ando¹, Hirotaka Watanabe², Shigeyoshi Usami¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

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