Hitoshi Habuka

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 9:00 AM - 10:45 AM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

[21a-E311-4] Gaseous species emitted from byproduct layer formed in the exhaust tube of SiC epitaxial reactor

Ichiro Mizushima¹, 〇Hitoshi Habuka² (1.NuFlare Technology, 2.Yokohama Nat. Univ.)