Kenta Irikura

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 9:00 AM - 10:45 AM E311 (E311)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM

[21a-E311-7] Effect of total gas flow rate on etching rate uniformity improvement over 4H-SiC wafer using ClF₃ gas

〇Kenta Irikura¹, Shogo Okuyama¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)