Tatsuji Nagaoka

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Oral presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM

[21p-B31-10] Homoepitaxial Growth of Undoped and Zn-doped β-Ga₂O₃ by Mist Chemical Vapor Deposition

〇Tatsuji Nagaoka¹, Hiroyuki Nishinaka², Masahiro Yoshimoto² (1.Toyota Motor Corporation, 2.Kyoto Inst. of Tech.)