Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 1:15 PM - 6:00 PM B31 (B31)

Kouichi Akahane(NICT), Sachie Fujikawa(Tokyo Denki University), Nobuaki Kojima(Toyota Tech. Inst.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[18p-B31-1] Epitaxial GaAs Lift Off from Si(111) via 2D-In₂Se₃

〇Nobuaki Kojima¹, Yu-Cian Wang¹, Kei Kawakatsu¹, Akio Yamamoto¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (1.Toyota Tech. Inst.)

1:30 PM - 1:45 PM

▲ [18p-B31-2] Metallic selenides as the buffers for GaAs grown on Si (111)

〇(PC)YUCIAN WANG¹, Nobuaki Kojima¹, Kei Kawakatsu¹, Akio Yamamoto¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (1.Toyota Technological Institute)

1:45 PM - 2:00 PM

[18p-B31-3] Direct GaAs growth on SOI substrate and its crystal quality evaluation

〇JINKWAN KWOEN¹, KATSUYUKI WATANABE¹, YASUHIKO ARAKAWA¹ (1.NanoQuine, U. Tokyo)

2:00 PM - 2:15 PM

[18p-B31-4] Growth and Evaluation of Metamorphic InAs/GaSb Superlattice using MOVPE

〇Yuki Imamura¹, Tomohito Ohama¹, Koji Maeda¹, Masakazu Arai¹ (1.Miyazaki Univ.)

2:30 PM - 2:45 PM

[18p-B31-5] [Highlight] Classification of RHEED Pattern Using Machine Learning

〇JINKWAN KWOEN¹, YASUHIKO ARAKAWA¹ (1.NanoQuine, U. Tokyo)

2:45 PM - 3:00 PM

[18p-B31-6] Growth of self-assembled quantum dot by P-As interdiffusion on InP(311)B substrates

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹ (1.NICT)

3:00 PM - 3:15 PM

[18p-B31-7] 1.6 μm-band Emission from Metamorphic InAs Quantum Dots on GaAs Substrates

〇Wenbo Zhan¹, Satomi Ishida², Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,3, Yasuhiko Arakawa¹ (1.NanoQuine, 2.RCAST, 3.IIS, Univ. of Tokyo)

3:15 PM - 3:30 PM

[18p-B31-8] InAs/GaAs Trilayer Quantum Dots with Long-wavelength Emission

〇Wenbo Zhan¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, Univ. of Tokyo)

3:45 PM - 4:00 PM

[18p-B31-9] Growth rate dependency of GaAsSb / GaAs Quantum Dots

〇Yusuke Oteki^1,2, Yasushi Shoji³, Naoya Miyashita¹, Yoshitaka Okada^1,2 (1.RCAST, Univ. of Tokyo, 2.School of Engineering, Univ. of Tokyo, 3.AIST)

4:00 PM - 4:15 PM

[18p-B31-10] Suppression of pit formation in InAs growth on GaSb(001) by two-step MBE

〇Shigekazu Okumura^1,2, Ryo Suzuki¹, Koji Tsunoda¹, Hironori Nishino¹, Masakazu Sugiyama² (1.Fujitsu Lab., 2.RCAST Univ. of Tokyo)

4:15 PM - 4:30 PM

[18p-B31-11] Polarization-insensitive optical gain of highly stacked InAs/GaAs quantum dot semiconductor optical amplifier

〇Toshiyuki Kaizu^1,2, Tomoya Kakutani¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ, 2.CSREA, Kobe Univ.)

4:30 PM - 4:45 PM

△ [18p-B31-12] Temperature dependence of electron spin dynamics in InGaAs quantum dots capped with GaAs layer grown at low temperature

〇Yuto Nakamura¹, Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.Hokkaido Univ.)

5:00 PM - 5:15 PM

[18p-B31-13] Microlenses fabricated on GaAs substrate

〇Tatsuya Imaoka¹, Homare Kambara¹, Taishi Sasaki¹, Satoshi Shimomura¹ (1.Ehime Univ)

5:15 PM - 5:30 PM

[18p-B31-14] Design of micro-lens fabricated on GaAs substrates

〇Homare Kambara¹, Taishi Sasaki¹, Tatsuya Imaoka¹, Satoshi Shimomura¹ (1.Ehime Univ.)

5:30 PM - 5:45 PM

[18p-B31-15] Equilibrium shapes of faceted GaN under metalorganic vapor phase epitaxy condition: Wulff construction using absolute surface energies

〇Yuki Seta¹, Abdul-Muizz Pradipto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

5:45 PM - 6:00 PM

[18p-B31-16] Thermodynamic analysis for Ⅲ-nitride semiconductors nonpolar planes during MOVPE

〇Tsunashi Shimizu¹, Yuki Seta¹, Abdul Muizz Pradipto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Akira Kusaba², Yoshihiro Kangawa^3,4 (1.Mie Univ., 2.Gakushuin Univ., 3.Kyushu Univ., 4.Nagoya Univ.)

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