Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[20a-E312-1~10] 6.2 Carbon-based thin films

Fri. Sep 20, 2019 9:15 AM - 12:00 PM E312 (E312)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

△ [20a-E312-1] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

〇(B)Naoya Niikura¹, Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Aoi Morishita¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda univ., 2.Zaiken)

9:30 AM - 9:45 AM

△ [20a-E312-2] Evaluation of RF Performance for ALD-Al2O3 2DHG Diamond MOSFETs by miniaturization of the Gate Length

〇(B)Masakazu Arai¹, Ken Kudara¹, Shoichiro Imanishi¹, Kiyotaka Horikawa¹, Atsushi Hirakawa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ, 2.Zaiken)

9:45 AM - 10:00 AM

△ [20a-E312-3] RF Power Performance when biased at V_DS of −70 V
for 2DHG Diamond MOSFETs with 200-nm Insulator Al₂O₃;

〇(B)Yukiko Suzuki¹, Ken Kudara¹, Shoichiro Imanishi¹, Kiyotaka Horikawa¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken.)

10:00 AM - 10:15 AM

△ [20a-E312-4] Electrical Properties of Inversion Channel Diamond MOSFET with N-doped body

〇Tsubasa Matsumoto¹, Ukyo Sakurai¹, Tomoya Yamakawa¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Satoshi Yamasaki^1,2, Takao Inokuma¹, Norio Tokuda^1,2 (1.Kanazawa Univ., 2.AIST)

10:15 AM - 10:30 AM

▲ [20a-E312-5] Interaction between Boron Nitride and H-terminated (111) Diamond Surface: A First-Principles Investigation

〇(P)Sushma Yadav¹, Tsuyoshi Miyazaki¹ (1.International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)

10:45 AM - 11:00 AM

△ [20a-E312-6] Electrical characteristics of diamond Schottky-pn diode at low temperature

〇(M1C)Ayumu Karasawa¹, Toshiharu Makino^1,2, Hiromitsu Kato², Masahiko Ogura², Yukako Kato², Daisuke Takeuchi², Satoshi Yamasaki^1,2, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.AIST)

11:00 AM - 11:15 AM

△ [20a-E312-7] Dependence on Distance and Depth of Seawater Wireless Communication utilizing Diamond Solution Gate FET as a Receiver

〇(B)Teruaki Takarada¹, Kaito Tadenuma¹, Yutaro Iyama¹, Yu Hao Chang¹, Yukihiro Shintani¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken.)

11:15 AM - 11:30 AM

△ [20a-E312-8] pH Sensing with Vessel Gate utilizing Diamond Electrolyte Solution Gate FET

〇(B)Shuto Kawaguchi¹, Yutaro Iyama¹, Yu.Hao Chang¹, Kaito Tadenuma¹, Yukihiro Shintani¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Zaiken)

11:30 AM - 11:45 AM

△ [20a-E312-9] Superconducting Boron-doped Diamond Josephson Junction Formed by Single (111) Shallow Growth Step

〇Yasuhiro Takahashi¹, Shotaro Amano¹, Aoi Morishita¹, Taisuke Kageura^1,2, Yoshihiko Takano², Minoru Tachiki², Shuuichi Ooi², Shunichi Arisawa², Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.NIMS, 3.ZAIKEN)

11:45 AM - 12:00 PM

▲ [20a-E312-10] On-chip Single Crystal Diamond MEMS with Electrical Actuation and Sensing

〇Meiyong Liao¹, Liwen Sang¹, Masataka Imura¹, Satoshi Koizumi¹, Yasuo Koide¹ (1.Nattional Institute for Materials Science)

Session information

[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-1] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

△ [20a-E312-2] Evaluation of RF Performance for ALD-Al2O3 2DHG Diamond MOSFETs by miniaturization of the Gate Length

△ [20a-E312-3] RF Power Performance when biased at V_DS of −70 V
for 2DHG Diamond MOSFETs with 200-nm Insulator Al₂O₃;

△ [20a-E312-4] Electrical Properties of Inversion Channel Diamond MOSFET with N-doped body

▲ [20a-E312-5] Interaction between Boron Nitride and H-terminated (111) Diamond Surface: A First-Principles Investigation

△ [20a-E312-6] Electrical characteristics of diamond Schottky-pn diode at low temperature

△ [20a-E312-7] Dependence on Distance and Depth of Seawater Wireless Communication utilizing Diamond Solution Gate FET as a Receiver

△ [20a-E312-8] pH Sensing with Vessel Gate utilizing Diamond Electrolyte Solution Gate FET

△ [20a-E312-9] Superconducting Boron-doped Diamond Josephson Junction Formed by Single (111) Shallow Growth Step

▲ [20a-E312-10] On-chip Single Crystal Diamond MEMS with Electrical Actuation and Sensing

Authentication

Session information

[20a-E312-1~10] 6.2 Carbon-based thin films

△ [20a-E312-1] (111) Vertical-type 2DHG Diamond MOSFETs with Hexagonal Trench Structures

△ [20a-E312-2] Evaluation of RF Performance for ALD-Al2O3 2DHG Diamond MOSFETs by miniaturization of the Gate Length

△ [20a-E312-3] RF Power Performance when biased at VDS of −70 Vfor 2DHG Diamond MOSFETs with 200-nm Insulator Al2O3;

△ [20a-E312-4] Electrical Properties of Inversion Channel Diamond MOSFET with N-doped body

▲ [20a-E312-5] Interaction between Boron Nitride and H-terminated (111) Diamond Surface: A First-Principles Investigation

△ [20a-E312-6] Electrical characteristics of diamond Schottky-pn diode at low temperature

△ [20a-E312-7] Dependence on Distance and Depth of Seawater Wireless Communication utilizing Diamond Solution Gate FET as a Receiver

△ [20a-E312-8] pH Sensing with Vessel Gate utilizing Diamond Electrolyte Solution Gate FET

△ [20a-E312-9] Superconducting Boron-doped Diamond Josephson Junction Formed by Single (111) Shallow Growth Step

▲ [20a-E312-10] On-chip Single Crystal Diamond MEMS with Electrical Actuation and Sensing

Authentication

△ [20a-E312-3] RF Power Performance when biased at V_DS of −70 V
for 2DHG Diamond MOSFETs with 200-nm Insulator Al₂O₃;