Oral presentation

[20a-E216-7~13] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

Fri. Sep 20, 2019 10:45 AM - 12:30 PM E216 (E216)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:45 AM - 11:00 AM

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

〇Shinji Isogami¹, Youhei Shiokawa², Atsushi Tsumita², Tomohiro Taniguchi³, Seiji Mitani¹, Tomoyuki Sasaki², Masamitsu Hayashi^1,4 (1.NIMS, 2.TDK, 3.AIST, 4.Univ. of Tokyo)

11:00 AM - 11:15 AM

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

〇(D)Miao JIANG¹, Hirokatsu Asahara¹, Shoichi Sato¹, Shinobu Ohya^1,2,3, Masaaki Tanaka^1,2 (1.Dept. of Electrical Engineering, The Univ. of Tokyo, 2.CSRN, Graduate School of Engineering, The Univ. of Tokyo, 3.Institute of Engineering Innovation, Graduate School of Engineering, The Univ. of Tokyo)

11:15 AM - 11:30 AM

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

〇(M1)Vihanga Zoysa¹, Ryuuichi Itoh¹, Yutara Takeuchi¹, Samik DuttaGupta^1,2,3, Shunsuke Fukami^1,2,3,4,5, Hideo Ohno^1,2,3,4,5 (1.RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ.)

11:30 AM - 11:45 AM

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

〇(M2)Fumiaki Shimohashi¹, Bao Nguyen¹, Michihiko Yamanouchi², Tetsuya Uemura¹ (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

11:45 AM - 12:00 PM

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

〇Daichi Sugawara¹, Shutaro Karube¹, Makoto Kohda¹, Junsaku Nitta¹ (1.Tohoku Univ)

12:00 PM - 12:15 PM

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

〇Samik Duttagupta^1,2,3, Aleksandr Kurenkov^1,2,3, Oleg Tretiakov⁶, Gunasheel Krishnaswamy⁷, Giacomo Sala⁷, Viola Krizakova⁷, Francesco Maccherozzi⁸, Sarnjeet Dhesi⁸, Pietro Gambardella⁷, Shunsuke Fukami^1,2,3,4,5, Hideo Ohno^1,2,3,4,5 (1.CSIS, Tohoku Univ., 2.CSRN, Tohoku Univ., 3.RIEC, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ., 6.School of Physics, UNSW, 7.D-MAT, ETH Zurich, 8.Diamond Light Source)

12:15 PM - 12:30 PM

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

〇Namhai Pham^1,2,3, Huynh Duy Khang Nguyen¹, Takanori Shirokura¹ (1.Tokyo Tech, 2.Univ. Tokyo, 3.JST-CREST)

Oral presentation

[20p-E216-1~7] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

Fri. Sep 20, 2019 1:30 PM - 3:15 PM E216 (E216)

Eiji Shikoh(大阪市大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

〇Satoshi Haku¹, Akira Musha¹, Hiroyasu Nakayama², Kazuya Ando¹ (1.Keio Univ., 2.NIMS)

1:45 PM - 2:00 PM

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

〇Shutaro Karube^1,2, Nobuki Tezuka^1,2, Makoto Kohda^1,2,3, Junsaku Nitta^1,2,3 (1.Tohoku Univ. Eng., 2.Tohoku Univ. CSRN, 3.Tohoku Univ. CSIS)

2:00 PM - 2:15 PM

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems

〇Shinji Isogami¹ (1.NIMS)

2:15 PM - 2:30 PM

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

〇Aleksandr Kurenkov^1,2,3, Samik DuttaGupta^1,2,3, Chaoliang Zhang^1,4,5, Shunsuke Fukami^1,2,3,5,6, Yoshihiko Horio¹, Hideo Ohno^1,2,3,5,6 (1.RIEC, Tohoku University, 2.CSIS, 3.CSRN, 4.FRIS, 5.CIES, 6.WPI-AIMR)

2:30 PM - 2:45 PM

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

〇Ryuhei Kohno^1,2,3,4, Joao Sampaio^1,2,3,4, Stanislas Rohart^1,2,3,4, Andre Thiaville^1,2,3,4 (1.LPS, 2.CNRS, 3.Univ. Paris-Sud, 4.Univ. Paris-Saclay)

2:45 PM - 3:00 PM

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

〇(D)Yicheng Guan¹, Bin Cui¹, Xilin Zhou¹, Tianping Ma¹, Stuart S. P. Parkin¹ (1.Max-planck Society)

3:00 PM - 3:15 PM

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

〇(D)Yicheng Guan¹, Xilin Zhou¹, Tianping Ma¹, Stuart S. P. Parkin¹ (1.Max-Planck Society)

Sessions

Code-sharing session » 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

[20a-E216-7~13] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

[20p-E216-1~7] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

Authentication

Sessions

Code-sharing session » 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

[20a-E216-7~13] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt1-xMnx/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO2

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

[20p-E216-1~7] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe4N, Mn4N)/NM bilayer systems

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

Authentication

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems