[18a-B11-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[18a-B11-6] A Feasibility Study on Ferroelectric Shadow SRAM Using a New Variability Design Scheme

〇KIYOSHI TAKEUCHI¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.IIS, Univ. Tokyo)

Keywords:non-volatile memory, ferroelectric memory, variability

Motivated by the recent discovery of Hf-based ferroelectricity, the feasibility of Ferroelectric Shadow SRAM (FE-SRAM) was reconsidered. By using a newly proposed variability design method, it was revealed that Hf-based FE-SRAM is an attractive candidate for an ultra low-power non-volatile memory solution.