The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C309 (C309)

Keiichiro Urabe(Kyoto Univ.), Takayoshi Tsutsumi(名大)

11:30 AM - 11:45 AM

[18a-C309-9] Observation of Li diffusion in Si crystal by first-principles accelerated molecular dynamics simulation

Masahiro Yamamoto1, Akio Ishii2, Shuhei Shinzato2, Shigenobu Ogata2 (1.Panasonic, 2.Osaka Univ.)

Keywords:molecular dynamics, first principle, diffusion

We developed first-principles molecular dynamics that is suitable for practical use to obtain the accurate reaction rate of thermally-activated events. We applied the method to Li diffusion in Si crystal and the obtained diffusion coefficients were in good agreement with the experimental results.