Oral presentation

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C309 (C309)

Keiichiro Urabe(Kyoto Univ.), Takayoshi Tsutsumi(名大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-C309-1] Development of neutral beam etching equipment for realizing mask-less defect-free fabrication

〇Yoshiyuki Nozawa¹, Liao Bryan¹, Ryosuke Fujii¹, Toshihiro Hayami¹, Daisuke Ohori², Shuichi Noda³, Mikio Kadoi⁴, Teruhisa Ishida⁵, Mami Tanaka⁵, Masahiro Sota⁵, Kazuhiko Endo³, Seiji Samukawa² (1.SPT Co., Ltd., 2.IFS, Tohoku Univ., 3.AIST, 4.LTJ Corp., 5.NAGASE & CO., LTD.)

9:15 AM - 9:30 AM

[18a-C309-2] Development of bio-template arrangement equipment for realizing mask-less defect-free fabrication

〇MIKIO KADOI¹, MASAHISA ISHIDA², MAMI TANAKA², MASAHIRO SOTA², DAISUKE OHORI³, SHUICHI NODA⁴, YOSHIYUKI NOZAWA⁵, BRIAN RIAO⁵, RYOSUKE FUJII⁵, TOSHIYASU HAYAMI⁵, KAZUHIKO ENDO⁴, SEIJI SAMUKAWA³ (1.LTJ Corp., 2.NAGASE & CO., LTD., 3.IFS, Tohoku Univ., 4.AIST, 5.SPT Co., Ltd.)

9:30 AM - 9:45 AM

[18a-C309-3] Cyclic Etching of Cobalt via Oxide and Organometallic Complex

〇Sumiko Fujisaki¹, Yoshihide Yamaguchi¹, Hiroyuki Kobayashi¹, Kazunori Shinoda¹, Masaki Yamada¹, Hirotaka Hamamura¹, Kohei Kawamura², Hiroto Otake², Masaeu Izawa² (1.Hitachi R&D, 2.Hitachi High-Tech)

9:45 AM - 10:00 AM

[18a-C309-4] Thermal etching reactions of acetylacetone with transition metals

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:00 AM - 10:30 AM

[18a-C309-5] [INVITED] Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

〇Akiko Hirata¹, Masanaga Fukasawa¹, Kazunori Nagahata², Hu Li³, Kazuhiro Karahashi⁴, Satoshi Hamaguchi⁴, Tetsuya Tatsumi¹ (1.Sony Semiconductor Solutions Corporation, 2.Sony Semiconductor Manufacturing Corporation, 3.Tokyo Electron, 4.Osaka Univ.)

10:45 AM - 11:00 AM

△ [18a-C309-6] Potential structure analysis of a capillary plate in a dual frequency CCP

〇(D)Makato Moriyama¹, Akihiro Mitsuya¹, Naoya Nakahara¹, Haruka Suzuki¹, Hirotaka Toyoda¹ (1.Nagoya Univ.)

11:00 AM - 11:15 AM

△ [18a-C309-7] Surface modification of Y₂O₃ by F⁺ ion irradiation

〇(M1)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sungil Cho², Hyunjung Park², Michiro Isobe¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ, 2.Memory Etch Technology Team, Samsung Electronics)

11:15 AM - 11:30 AM

△ [18a-C309-8] Identification of Gas-chemistry-dependent “Effective” Polarity of Plasma-damaged Layer in Si Substrates

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[18a-C309-9] Observation of Li diffusion in Si crystal by first-principles accelerated molecular dynamics simulation

〇Masahiro Yamamoto¹, Akio Ishii², Shuhei Shinzato², Shigenobu Ogata² (1.Panasonic, 2.Osaka Univ.)

11:45 AM - 12:00 PM

[18a-C309-10] Electronic properties and dissociation channels of CH₃F

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya university)

Oral presentation

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 1:45 PM - 5:15 PM C309 (C309)

Akihisa Ogino(Shizuoka Univ.), Shota Nunomura(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [18p-C309-1] Examination of atmospheric plasma treatment conditions for bonding strength improvement of dental materials

〇Yuri Abe¹, Yuma Suenaga¹, Tomohiro Hoshino², Yoshiki Matsudate², Takehiko Sugano², Nobuhiro Yoda², Akitoshi Okino¹, Keiichi Sasaki² (1.FIRST, Tokyo Tech., 2.Tohoku univ, Dent.)

2:00 PM - 2:15 PM

[18p-C309-2] Effect of H₂-N₂ plasma exposure on micro/nanostructured titanium

〇(M2C)Zhongqiu Lin¹, He Wang¹, Naoki Aoyama¹, Toshiaki Suzuki¹, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ.)

2:15 PM - 2:30 PM

[18p-C309-3] Development of high-speed removal technology for surface coating on long objects
by MVP method using thermionic emission filament

〇(M2)Masaya Furuta¹, Kosaka Hiroyuki¹, Tatsuya Furuki¹, Yamakawa Kouji² (1.Gifu Univ., 2.katagiri engineering)

2:30 PM - 2:45 PM

△ [18p-C309-4] Comparison between characteristics of twin-cathode and twin-anode torches

〇(B)Kota Kawano¹, Hideki Sasaoka¹, Muneo Furuse¹, Satoshi Sakiyama² (1.NIT, Oshima college, 2.Yamaguchi Univ.)

2:45 PM - 3:00 PM

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH₄/H₂ induction thermal plasmas.

〇(M1)Kazufumi Hata¹, Kano Naoki¹, Nakano Yusuke¹, Tanaka Yasunori¹, Uesugi Yoshihiko¹, Ishijima Tatsuo¹ (1.Kanazawa Univ.)

3:00 PM - 3:15 PM

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

〇(D)Nguyen ThiKhanh Hoa¹, Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seichiiro Higashi¹ (1.Hiroshima Univ.)

3:30 PM - 3:45 PM

[18p-C309-7] Fabrication and Refractive Index Control of SiO₂ by programmable RAS

〇Yasuhito Tanaka^1,2, Delgado-Fuentes Gabriel¹, Shinichiro Saisho², Hideo Isshiki¹ (1.UEC, 2.SHINCRON CO., LTD)

3:45 PM - 4:00 PM

[18p-C309-8] Negative plasma potential in Mg-CF₄ direct current reactive sputtering discharge

〇Eiji Kusano¹ (1.Kanazawa Inst.Technol.)

4:00 PM - 4:15 PM

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

〇Takuya Miyazawa¹, Yuta Ochiai¹, Hiroyuki Suzuki¹, Wataru Hoshino¹, Miki Goto¹ (1.Kanagawa inst.)

4:15 PM - 4:30 PM

△ [18p-C309-10] Comparison of Ag thin films deposited in different Kr gas pressures

〇Ryosuke Sagara¹, Midori Kawamura¹, Takayuki Kiba¹, Yosio Abe¹, Kyung Ho Kim¹ (1.Kitami Institute of Tech.)

4:30 PM - 4:45 PM

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

〇(M2)Masayuki Nakamura¹, Keigo Takeda¹, Takayuki Ohta¹ (1.Meijo Univ.)

4:45 PM - 5:00 PM

[18p-C309-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Masashi Endo¹, Giichiro Uchida², Akinori Ebe³ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

5:00 PM - 5:15 PM

△ [18p-C309-13] Nanoparticle formation on ZnO thin film by laser effect during RF sputtering

〇(M2)Wataru Wakaki¹, Akio Sanpei¹, Noriyuki Hasuike¹, Susumu Kamoi², Haruhiko Himura¹ (1.Kyoto Inst. of Tech., 2.Kyoto Pre. Tech. Center)

Poster presentation

[20a-PA4-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Sep 20, 2019 9:30 AM - 11:30 AM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PA4-1] Two-dimensional thin films preparation by PLD using powder target I

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Masanori Shinohara¹, Yoshiaki Suda² (1.Nat. Ins. Tech, Sasebo Col., 2.Nat. Ins. Tech, Ishikawa Col.)

9:30 AM - 11:30 AM

[20a-PA4-2] Local synthesis of DLC thin films by atmospheric pressure μ plasma jet.

〇(B)Ryota Nishimura¹, Hiroyuki Yoshiki¹ (1.National Institute of Technology, Tsuruoka College)

9:30 AM - 11:30 AM

[20a-PA4-3] Control of Hydroxyapatite crystal orientation by sputtering

〇(M1)Tomoya Oda¹, Tsukasa Nakamura¹, Shinji Takayanagi¹, Mami Matsukawa¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[20a-PA4-4] Supetter Epitaxy of (ZnO)_x(InN)_1-x Films on Sapphire Substrates:Observation of Morphological Evolution

〇Kentaro Kaneshima¹, Nanoka Miyahara¹, Seiichi Urakawa¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ)

9:30 AM - 11:30 AM

▲ [20a-PA4-5] Morphological Characterization of RF Magnetron Sputtered Zinc Oxide Thin Films-Laser Assisted

〇(M2)Edrick Abu Saidu¹, Akio Sanpei¹, Wataru Wakaki¹, Yasuaki Hayashi¹, Haruhiko Himura¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[20a-PA4-6] Low temperature synthesis of Al₂O₃ thin film by low energy electron and oxygen radical irradiation on Al(CH₃)₃ condensed layer

〇(M1)Atsuki Okawa¹, Daichi Yamada², Yohei Otani², Tetsuya Sato¹ (1.Univ. of Yamanashi, 2.Tokyo Univ. of Science, Suwa)

9:30 AM - 11:30 AM

[20a-PA4-7] Droplet-Vaporization Behavior in Plasma during Plasma-assisted Mist Chemical Vapor Deposition (II)

〇Kosuke Takenaka¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[20a-PA4-8] Numerical Analysis of Influence of H₂ Dilution Rate on DLC Deposition Rate
using H₂/CH₄ Plasma-Enhanced CVD Model

〇(M2)Shin Ogawa¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Tech, 2.Meijo Univ., 3.Gifu Univ.)

9:30 AM - 11:30 AM

[20a-PA4-9] Preparation of Au-ZnO composite film using open-air microplasma jet and its photocatalytic property (Ⅱ)

〇Yoshiki Shimizu¹, Kazuto Hatakeyama¹, Yoshie Ishikawa¹ (1.Nanomaterials RI, AIST)

9:30 AM - 11:30 AM

[20a-PA4-10] Nitrogen Plasma Processing of Photocatalyst by using Electron Beam Excited Plasma

〇(M2)Hayato Tomii¹, Yuichirou Takemura¹ (1.Kindai Univ.)

9:30 AM - 11:30 AM

[20a-PA4-11] Plasmonic Sensor Using Silver Nanoparticles Exposed to Plasma for Detection of Binary-Mixture Organic Vapor

〇(D)Kei Hosomi¹, Koichi Ozaki¹, Katsumi Takahiro¹, Fumitaka Nishiyama², Shin Yokoyama² (1.Kyoto Inst. Tech., 2.Hiroshima Univ.)

9:30 AM - 11:30 AM

[20a-PA4-12] Effect of Microwave Excited Hydrogen and Ammonia Gas Mixture Plasma on Hydrogenation of Sodium Metaborate

〇Naoki Maeda¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

[20a-PA4-13] Measurement of Negative Ion Signal in a Discharge between Carbon Electrodes by Laser Photodetachment

〇Yuito Ikeda¹, Nobuteru Tsubouchi², Motoi Wada¹ (1.Doshisha Univ., 2.AIST kansai center)

9:30 AM - 11:30 AM

[20a-PA4-14] Thermionic Emission Characteristics of Cesiated Al_xGa_1-xN Emitter

〇Shota Uchida¹, Shigeya Kimura², Hisashi Yoshida², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Toshiba Corp.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [18a-C309-6] Potential structure analysis of a capillary plate in a dual frequency CCP

△ [18a-C309-7] Surface modification of Y2O3 by F+ ion irradiation

△ [18a-C309-8] Identification of Gas-chemistry-dependent “Effective” Polarity of Plasma-damaged Layer in Si Substrates

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [18p-C309-1] Examination of atmospheric plasma treatment conditions for bonding strength improvement of dental materials

△ [18p-C309-4] Comparison between characteristics of twin-cathode and twin-anode torches

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition usingtime-series exposure of modulated and non-modulated Ar/CH4/H2 induction thermal plasmas.

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

△ [18p-C309-10] Comparison of Ag thin films deposited in different Kr gas pressures

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

△ [18p-C309-13] Nanoparticle formation on ZnO thin film by laser effect during RF sputtering

[20a-PA4-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [20a-PA4-5] Morphological Characterization of RF Magnetron Sputtered Zinc Oxide Thin Films-Laser Assisted

Authentication

△ [18a-C309-7] Surface modification of Y₂O₃ by F⁺ ion irradiation

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH₄/H₂ induction thermal plasmas.