The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 1:45 PM - 5:15 PM C309 (C309)

Akihisa Ogino(Shizuoka Univ.), Shota Nunomura(AIST)

2:45 PM - 3:00 PM

[18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH4/H2 induction thermal plasmas.

〇(M1)Kazufumi Hata1, Kano Naoki1, Nakano Yusuke1, Tanaka Yasunori1, Uesugi Yoshihiko1, Ishijima Tatsuo1 (1.Kanazawa Univ.)

Keywords:Modulated induction thermal plasma, Non-modulated induction thermal plasma, Polycrystalline diamond

We investigated pressure dependence of polycrystalline diamond film deposition by exposure of modulated and non-modulated induction thermal plasmas. The modulated induction thermal plasma was used for nucleation of diamond particles and the non-modulated induction thermal plasma was adopted for particle growth. Results showed that reducing pressure increased deposition rate of diamond film. This may be because higher hydrocarbon-based particle flux is exposed at lower pressures.