The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

Masayuki Nakamura; Keigo Takeda; Takayuki Ohta

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 1:45 PM - 5:15 PM C309 (C309)

Akihisa Ogino(Shizuoka Univ.), Shota Nunomura(AIST)

4:30 PM - 4:45 PM

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

〇(M2)Masayuki Nakamura¹, Keigo Takeda¹, Takayuki Ohta¹ (1.Meijo Univ.)

Keywords:HiPIMS, TiN

Ion energy distribution function(IEDF) of Ti⁺ was measured with energy-resolved mass spectrometry, in Ti-HiPIMS plasma using N₂/Ar gases in order to elucidate ion production mechanism. Flux of high energy Ti⁺ was increased with increasing applied voltage and the tail of IEDF was expanded to the high energy of 80eV. These results indicate that the gas rare-fraction by sputtered species was advanced with increasing applied voltage.