[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

〇Takuya Miyazawa¹, Yuta Ochiai¹, Hiroyuki Suzuki¹, Wataru Hoshino¹, Miki Goto¹ (1.Kanagawa inst.)

Keywords:MgO thin films, Transparent conductive films, RF magnetron sputtering

We have studied the effect of the crystalline structure, optical and electrical properties of MgO-C films. The MgO-C thin films have been fabricated by RF magnetoron sputtering equipment with various substrate temperatures of growth parameters. The target ware MgO and C. The MgO-C films were exposed the gas plasma H₂ + CH₄ mixture by PCVD equipment. The resistivity, transmittance and crystal orientation of these films ware investigated as a function of various substrate temperatures. As a result, resistivity of under 2Ω・cm and an average transmittance of about 90% in the visible range were obtained for the films deposited at sputtering gas Ar : pressure of 2 Pa, flow rate of 15 sccm, and substrate temperature of 400 ℃. The crystalline structure of the films was confirmed by X-ray diffraction (XRD) analysis. The obtained films had a strong (002) preferred orientation at 700 ℃.