The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-E303-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 18, 2019 9:00 AM - 12:15 PM E303 (E303)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

11:45 AM - 12:00 PM

[18a-E303-11] Chemical bond state evaluation at buried interface by laboratory HAXPES method

Tappei Nishihara1, Hiroki Kanai1, Ryo Yokogawa1,2, Ichiro Hirosawa3, Satoshi Yasuno3, Toshiro Okawa4, Atsushi Ogura1 (1.Meiji Univ., 2.JSPS Research Fellow DC, 3.JASRI, 4.Scienta Omicron)

Keywords:XPS, Hard X-ray, Synchrotron

In recent years, a laboratory-based equipment for hard X-ray photoelectron spectroscopy, which has attracted much attention, has been developed, and measurement results using it are reported. We will report the details of the device performance using Au, SiO2/Si structure sample, and the influence of the TiN/Si structure TiN film thickness on the measurement results.