[18a-PB1-1~20] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [18a-PB1-3] The Improvement of Hole Gas Accumulation in Al-Catalyzed SiNW/i-Ge Core-Shell Structure by B-Doped Outermost Si Shell Formation

〇Wipakorn Jevasuwan¹、Xiaolong Zhang¹、Naoki Fukata¹ (1.NIMS)

キーワード：nanowire, vapor solid liquid, chemical vapor deposition

Core-shell nanowire (NW) structures have recently attracted great attention for high electron mobility transistors due to their remarkable electrical and mechanical properties. From our previous reports, the vapor-liquid-solid (VLS) growth using Al catalyst could create single crystalline SiNWs with the resolving of metal catalyst contamination problem. The hole gas accumulation in unintentional Al doped p-Si/Ge core-shell structure were observed in i-Ge shell region. However, the carrier concentration of unintentional Al doping from catalyst as p-type dopants in SiNWs was limited and difficult to further increase by adding of B doping, resulting in the limit of hole gas density. Therefore, in this study, the effects of various B doping in p-Si shell outermost layer in the p-Si/i-Ge/p-Si core-double shell NW structure on the hole gas generation were investigated.