[18a-PB1-1~20] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [18a-PB1-4] Catalyst-free formation and hole gas accumulation in core-shell and core-double shell nanowires using Si and Ge

Xiaolong Zhang^2,1、〇Wipakorn Jevasuwan¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：Nanowire, Catalyst-free, Hole gas accumulation

One dimensional nanostructures, such as silicon (Si) and germanium (Ge) nanowires, (NWs) have been suggested as building blocks of vertical type metal oxide semiconductor field effect transistors (MOSFETs) with high speed and low energy consumption. The general method to the synthesis of the NWs is chemical vapor deposition (CVD) approach based on the vapor-liquid-solid (VLS) growth mechanism that requires metal as catalysts, such as gold, which causes contamination in the NW structure and affects their properties. Development of catalyst-free growth of NWs becomes more important for NW research. In this study, we showed the feasibility of using catalyst-free method to fabricate p-Si/i-Ge core-shell NWs and p-Si/i-Ge/p-Si core-double shell NWs with well-ordered heterojunction structures.