[18a-PB3-1~47] 15.4 III-V族窒化物結晶

▼ [18a-PB3-15] Analysis on Al layer formed by TMAl preflow for growth of GaN on SiC

〇Yifu Zhu¹、Jianwei Wang¹、Takeshi Momose¹、Yukihiro Shimogaki¹、Momoko Deura¹ (1.Univ. of Tokyo)

キーワード：gallium nitride, TMAl preflow