[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-32] The study on the atmospheric-pressure CVD process of GaN films using Ga Vapor as a Ga source

〇Wataru Kunieda¹, Yuki Tanaka¹, Hiroko Kominami¹, Kazuhiko Hara^2,3 (1.GSIST Shizuoka.univ., 2.GSST Shizuoka.univ., 3.RIE Shizuoka.univ.)

Keywords:GaN, CVD, sapphire substrate