[18p-B11-1~14] 13.5 デバイス／配線／集積化技術

▲ [18p-B11-5] Improved subthreshold characteristics of p-type poly-Si junctionless transistor by utilizing optimized channel structure

〇(D)Minju Ahn¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Institute of Industrial Science, University of Tokyo)

キーワード：Poly-Si, Junctionless, Transistor

In this report, we have experimentally investigated the subthreshold characteristics of p-type poly-Si junctionless transistors with optimized channel structure. The fabricated transistors exhibit excellent electrical characteristics in terms of steep subthreshold slope (~63mV/dec.), high on/off current ratio (~1.4x10⁸), hysteresis (~ 0V) and low off-state leakage current (<1x10^-13A).