[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-10] Suppression of pit formation in InAs growth on GaSb(001) by two-step MBE

〇Shigekazu Okumura^1,2, Ryo Suzuki¹, Koji Tsunoda¹, Hironori Nishino¹, Masakazu Sugiyama² (1.Fujitsu Lab., 2.RCAST Univ. of Tokyo)

Keywords:MBE, GaSb, InAs

GaSb/InAs system attracts much attention for the application to mid infrared detection. From the viewpoint of device application, the hetero growth for reducing the crystal defects is important. Thus far, a good crystal quality of InAs on GaSb can be obtained at a relatively low As₂ pressure. However, from the viewpoint of improving the productivity, the growth method to secure greater tolerance is required. In this study, we investigated the InAs growth temperature/sequence dependence. As a result, pit formation on InAs layer can be suppressed by applying low/high temperature sequence.