The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 1:15 PM - 6:00 PM B31 (B31)

Kouichi Akahane(NICT), Sachie Fujikawa(Tokyo Denki University), Nobuaki Kojima(Toyota Tech. Inst.)

3:45 PM - 4:00 PM

[18p-B31-9] Growth rate dependency of GaAsSb / GaAs Quantum Dots

〇Yusuke Oteki1,2, Yasushi Shoji3, Naoya Miyashita1, Yoshitaka Okada1,2 (1.RCAST, Univ. of Tokyo, 2.School of Engineering, Univ. of Tokyo, 3.AIST)

Keywords:quantum dots, GaSb