The 80th JSAP Autumn Meeting 2019

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8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 1:45 PM - 5:15 PM C309 (C309)

Akihisa Ogino(Shizuoka Univ.), Shota Nunomura(AIST)

3:00 PM - 3:15 PM

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

〇(D)Nguyen ThiKhanh Hoa1, Yuri Mizukawa1, Hiroaki Hanafusa1, Seichiiro Higashi1 (1.Hiroshima Univ.)

Keywords:micro-thermal plasma jet, transient reflectivity, amorphous silicon

High-speed camera (HSC) and He-Ne laser (632.8nm in wavelength) as a temperature probe for direct observation of phase transformation during µ-TPJ annealing were introduced in this research. The phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation were observed directly.