[18p-E101-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

[18p-E101-1] Progress and issues of GaN MOSFETs using ion implantation process

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Masaharu Edo¹, Kazutaka Mitsuishi², Jun Uzuhashi², Tadakatsu Ohkubo², Kazuhiro Hono², Jun Chen², Takashi Sekiguchi², Yoshihiro Irokawa², Toshihide Nabatame², Yasuo Koide² (1.Fuji Electric, 2.NIMS)

Keywords:GaN, ion implantation, MOSFET