[18p-E101-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

[18p-E101-2] Advanced device technologies for high-frequency GaN HEMTs

〇Shiro Ozaki^1,2, Kozo Makiyama^1,2, Toshihiro Ohki^1,2, Yusuke Kumazaki^1,2, Yoshitaka Niida^1,2, Masaru Sato^1,2, Yuichi Minoura^1,2, Atsushi Yamada^1,2, Junji Kotani^1,2, Naoya Okamoto^1,2, Norikazu Nakamura^1,2 (1.Fujitsu, 2.Fujitsu Labs.)

Keywords:high-frequency GaN HEMTs