[18p-E207-1~11] 15.1 Bulk crystal growth

[18p-E207-6] Growth of 3”φScAlMgO₄ single crystal by CZ method.

〇Yuji Shiraishi¹, Toki Nanto¹, Tsuguo Fukuda¹, Iechi Hiroyuki² (1.Fukuda Crystal Lab, 2.Nihon Univ)

Keywords:ScAlMgO4, crystal growth, CZ method

ScAlMgO4 (SCAM) have been much attracting attention for substrate of GaN epitaxial growth, because there were a little lattice-mismatch and thermal expansion coefficient difference between GaN and SCAM. We succeeded growing the SCAM single crystals with 3-inches in diameter using CZ method with the high-frequency heating furnace. The raw materials were charged in Ir crucible and crystals were grown along c-axis. The growing atmosphere was nitrogen gas or a little oxygen added to nitrogen gas. The wafers cut from grown crystals were clear and a prat of dislocation-free region in their wafers were founded using X-ray observation.