[18p-E304-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-E304-6] Silicon epitaxial growth using dichlorosilane for minimal CVD reactor

〇Mana Otani¹, Toshinori Takahashi¹, Mitsuko Muroi¹, Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:silicon, epitaxial growth, dichlorosilane

In order to produce semiconductor devices without waste, a "minimal fab" using a small-diameter wafer (diameter 12.5 mm) has been proposed. For silicon epitaxial growth, the vapor pressure of trichlorosilane used in previous reseach was unstable around room temperature and the variation in growth rate was leage. So in this research, dichlorosilane which is a gas at room temperature was for silicon epitaxial growth.