The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18p-E311-1~18] 6.3 Oxide electronics

Wed. Sep 18, 2019 1:15 PM - 6:00 PM E311 (E311)

Jobu Matsuno(Osaka Univ.), Azusa Hattori(Osaka Univ.)

2:30 PM - 2:45 PM

[18p-E311-6] Negative magnetoresistance of EuNbO3-xNx thin films

Takahiro Maruyama1, Akira Chikamatsu1, Yasushi Hirose1, Tukasa Katayama1, Tetsuya Hasegawa1 (1.Univ. of Tokyo)

Keywords:oxynitride, thin film, magnetoresistance

Oxides containing Eu2+(4f 7) are famous for their various physical properties due to their localized spins. EuNbO2N has been reported to exhibit a large negative magnetoresistance with the MR ratio of over -99%. This compound has been synthesized only in sintered powder form. For detailed elucidation of transport and magnetic properties, it is highly desirable to produce a single crystalline thin film without side effects such as grain boundary scattering. Therefore, in this study, we fabricate EuNbO3-xNx single crystal thin film and investigate its magnetoresistance effect.