The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

4:00 PM - 4:15 PM

[18p-N302-12] Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

Masahiro Takahashi1, Atsushi Tanaka2,3, Yuto Ando1, Hirotaka Watanabe2, Manato Deki2, Maki Kushimoto1, Shugo Nitta2, Yoshio Honda2, Kevin J. Chen2,4, Hiroshi Amano2,3,5,6 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Hong Kong Univ. of Sci. and Technol., 5.Nagoya Univ. ARC, 6.Nagoya Univ. VBL)

Keywords:Ion implantation, Gallium nitride, High temperature implantation