[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

△ [18p-N302-18] Development of Vertical-type 2DHG Diamond MOSFET towards Realization of High Power P-type MOSFET

〇(M1)Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN.)

Keywords:diamond, vertical-type MOSFET, power devices

In order to realize large current operation and low resistance of vertical-type two-dimensional hole gas (2DHG) diamond MOSFETs, we have fabricated the (001) vertical-type diamond device with multiple trenches in one device to increase the gate width WG up to 20 mm. As the result, we achieved the high current operation with maximum drain current IDS of -1.6 A (@VDS: -25 V, VGS: -20 V). Also, we have designed and fabricated vertical-type 2DHG diamond MOSFETs with hexagonal trench structures using the (111) diamond for the first time. Consequently, the drain current density (IDS) normalized by gate width was -250 mA/mm which is 3 times that of the previous device at same drain voltage. And, the minimum specific on-resistance Ron of 9.2 mΩ cm2 was obtained the device with hexagonal trench of 12 µm on a side. From this research, it is expected the development of low loss and high output vertical-type p-FET.