2019年第80回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[18p-PB1-1~84] 10 スピントロニクス・マグネティクス(ポスター)

2019年9月18日(水) 13:30 〜 15:30 PB1 (第二体育館)

13:30 〜 15:30

[18p-PB1-46] Spin-dependent Tunneling in the Plasma Oxidized Cr2O3 Barrier Magnetic Tunnel Junctions

Tomohiro Ichinose1、Kelvin Elphick2、Atsufumi Hirohata2、Shigemi Mizukami1,3,4 (1.AIMR, Tohoku Univ.、2.Univ. of York、3.CSIS, Tohoku Univ.、4.CSRN, Tohoku Univ.)

キーワード:magnetic tunnel junction, tunnel magnetoresistance, Cr2O3

There has been growing interest in the antiferromagnetic spintronics due to the high speed operation, no stray fields, and so on. The magnetic tunnel junctions (MTJs) with the Cr2O3 barrier would show the intriguing spin dependent transport phenomena such as magnetoresistance effects based on antiferromagnetic and/or magnetoelectric nature of the Cr2O3. However, it has not been addressed to the characterization of the ultrathin Cr2O3 films to date. In this work, the spin dependent transport properties in the MTJs with a Cr2O3 barrier were investigated.