13:30 〜 15:30
▲ [18p-PB1-46] Spin-dependent Tunneling in the Plasma Oxidized Cr2O3 Barrier Magnetic Tunnel Junctions
キーワード:magnetic tunnel junction, tunnel magnetoresistance, Cr2O3
There has been growing interest in the antiferromagnetic spintronics due to the high speed operation, no stray fields, and so on. The magnetic tunnel junctions (MTJs) with the Cr2O3 barrier would show the intriguing spin dependent transport phenomena such as magnetoresistance effects based on antiferromagnetic and/or magnetoelectric nature of the Cr2O3. However, it has not been addressed to the characterization of the ultrathin Cr2O3 films to date. In this work, the spin dependent transport properties in the MTJs with a Cr2O3 barrier were investigated.